Abstract

    This paper presents some the applicative aspects on the trans-linear principle of simulation for the basic amplifiers with MOS-FET devices (in common source, drain and gate), which operate in the sub-threshold conduction. The trans-linear principle exploits the exponential current-voltage non-linearity in bipolar and unipolar semiconductor devices (to which the trans- linear principle is extend for the sub-threshold MOS-FET devices ohmic region - through a drain/source current decomposition and just for MOS-FET devices operating above threshold).